Semiconductor devices and methods of manufacturing the same
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United States of America Patent
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Jan 9, 2018
Issued Date -
N/A
app pub date -
Oct 13, 2016
filing date -
Oct 16, 2015
priority date (Note) -
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Abstract
A semiconductor device includes a gate structure on a substrate, a source/drain layer on a portion of the substrate adjacent the gate structure, a first contact plug contacting an upper surface of the source/drain layer, and a second contact plug contacting upper surfaces of the gate structure and the first contact plug. A bottom surface of the second contact plug has a first portion not contacting the upper surface of the first contact plug, and the first portion is higher than the upper surface of the gate structure.
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