Horizontal gate all around and FinFET device isolation
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United States of America Patent
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Jan 9, 2018
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N/A
app pub date -
May 11, 2016
filing date -
May 11, 2015
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Abstract
Embodiments described herein generally relate to methods and device structures for horizontal gate all around (hGAA) isolation and fin field effect transistor (FinFET) isolation. A superlattice structure comprising different materials arranged in an alternatingly stacked formation may be formed on a substrate. In one embodiment, at least one of the layers of the superlattice structure may be oxidized to form a buried oxide layer adjacent the substrate.
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