Laterally diffused metal oxide semiconductor with segmented gate oxide
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United States of America Patent
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Jan 9, 2018
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app pub date -
Dec 20, 2016
filing date -
Dec 20, 2016
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Abstract
A power transistor is provided with at least one transistor finger that lies within a semiconductor material. The gate oxide is segmented into a set of segments with thick field oxide between each segment in order to reduce gate capacitance and thereby improve a resistance times gate charge figure of merit.
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