Nitride semiconductor device
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United States of America Patent
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-
Jan 9, 2018
Issued Date -
N/A
app pub date -
Mar 10, 2017
filing date -
Aug 9, 2016
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
A nitride semiconductor device includes a first semiconductor layer, a second semiconductor layer, a third semiconductor layer including a nitride semiconductor provided between the first semiconductor layer and the second semiconductor layer, the third semiconductor layer being contact with the first semiconductor layer and the second semiconductor layer, and a concentration of acceptor type impurity in the third semiconductor layer is higher than that in the first semiconductor layer and the second semiconductor layer, and including a source electrode and a drain electrode, a gate electrode, a first insulating layer, and a fourth semiconductor layer and a fifth semiconductor layer, wherein the nitride semiconductor device satisfying the following formula 0
First Claim
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International Classification(s)
- 2017 Application Filing Year
- H01L Class
- 30754 Applications Filed
- 25260 Patents Issued To-Date
- 82.14 % Issued To-Date
Cited Art Landscape
Patent Citation Ranking
- 0 Citation Count
- H01L Class
- 0 % this patent is cited more than
- 7 Age
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