High electron-mobility transistor
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United States of America Patent
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Jan 9, 2018
Grant Date -
Feb 23, 2017
app pub date -
Aug 19, 2016
filing date -
Aug 20, 2015
priority date (Note) -
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Abstract
A nitride semiconductor device is disclosed. The semiconductor device provides the GaN channel layer, the InAlN barrier layer on the GaN channel layer, and the n-type AlGaN layer on the InAlN barrier layer. The source and drain electrodes are formed on the n-type AlGaN layer, while, the gate electrode is formed directly on the InAlN barrier layer. The n-type AlGaN layer has the aluminum (Al) composition greater than 20% at the interface against the InAlN barrier layer, which is greater than the aluminum (Al) composition at the interface against the source electrode.
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