Epitaxial wafer for heterojunction bipolar transistor and heterojunction bipolar transistor
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United States of America Patent
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Jan 9, 2018
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app pub date -
May 26, 2015
filing date -
May 26, 2014
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Abstract
An epitaxial wafer for a heterojunction bipolar transistor and a heterojunction bipolar transistor that are capable of further reducing a turn-on voltage are provided. An epitaxial wafer for a heterojunction bipolar transistor includes a collector layer made of GaAs, a base layer formed on the collector layer and made of InGaAs, and an emitter layer formed on the base layer and made of InGaP, and the base layer has an In composition that decreases from the emitter layer side toward the collector layer side.
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