III-V lateral bipolar junction transistor
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United States of America Patent
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Jan 9, 2018
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app pub date -
Apr 6, 2016
filing date -
Apr 6, 2016
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Abstract
A lateral bipolar junction transistor (LBJT) device that includes an intrinsic III-V semiconductor material having a first band gap; and a base region present on the intrinsic III-V semiconductor material. The base region is composed of an III-V semiconductor material having a second band gap that is less than the first band gap. Emitter and collector regions present on opposing sides of the base region. The emitter and collector regions are composed of epitaxial III-V semiconductor material that is present on the intrinsic III-V semiconductor material.
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