Selectively deposited spacer film for metal gate sidewall protection
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United States of America Patent
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Jan 9, 2018
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app pub date -
Jul 17, 2017
filing date -
Jan 21, 2016
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Abstract
A method of fabricating a fin field-effect transistor (FinFET) device is provided. The method includes forming a carbon-based layer on a plurality of gate structures formed on a semiconductor substrate. Each gate structure overlies at least one fin formed on the semiconductor substrate. The carbon-based layer covers sidewalls of the gate structures. A metal silicide layer overlies the carbon-based layer. The metal silicide layer and carbon-based layer are removed, and a metal layer is formed between adjacent gate structures.
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