High-K layer chamfering to prevent oxygen ingress in replacement metal gate (RMG) process
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United States of America Patent
Stats
-
Jan 9, 2018
Issued Date -
N/A
app pub date -
Dec 31, 2015
filing date -
Dec 31, 2015
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
A semiconductor structure includes a semiconductor substrate having an outer surface; a plurality of oxide regions, located outward of the outer surface, and defining a plurality of metal-gate-stack-receiving cavities; and a liner interspersed between the plurality of oxide regions and the semiconductor substrate and between the plurality of oxide regions and the plurality of metal-gate-stack-receiving cavities. A layer of high-K material is deposited over the semiconductor structure, including on outer surfaces of the plurality of oxide regions, outer edges of the liner, on walls of the plurality of metal-gate-stack-receiving cavities, and on the outer surface of the semiconductor substrate within the plurality of metal-gate-stack-receiving cavities. The layer of high-K material is chamfered to remove same from the outer surfaces of the plurality of oxide regions, the outer edges of the liner, and partially down the walls of the plurality of metal-gate-stack-receiving cavities.
First Claim
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Family
International Classification(s)
- 2015 Application Filing Year
- H01L Class
- 25498 Applications Filed
- 22451 Patents Issued To-Date
- 88.06 % Issued To-Date
Cited Art Landscape
Patent Citation Ranking
- 13 Citation Count
- H01L Class
- 87.83 % this patent is cited more than
- 7 Age
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