Schottky barrier diode and method for manufacturing the same
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United States of America Patent
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Jan 9, 2018
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app pub date -
Feb 23, 2017
filing date -
Jul 27, 2015
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Abstract
A Schottky barrier diode includes: an n+ type of silicon carbide substrate; an n− type of epitaxial layer formed on a first surface of the n+ type of silicon carbide substrate; a plurality of p+ regions formed inside the n− type of epitaxial layer; a Schottky electrode formed in an upper portion of the n− type of epitaxial layer of an electrode region; and an ohmic electrode formed on a second surface of the n+ type of silicon carbide substrate, wherein the plurality of p+ regions are formed to be spaced apart from each other at a predetermined interval within the n− type of epitaxial layer.
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