Semiconductor device blocking leakage current and method of forming the same
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United States of America Patent
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Jan 9, 2018
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N/A
app pub date -
Feb 25, 2016
filing date -
Jun 8, 2015
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Abstract
A semiconductor device includes a gate assembly disposed on a device isolation layer, a gate spacer disposed on a side surface of the gate assembly, a contact assembly disposed on the gate spacer, an air gap disposed between the device isolation layer and the contact assembly, and a first spacer capping layer disposed between the gate spacer and the air gap. The first spacer capping layer has an etch selectivity with respect to the gate spacer.
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