Semiconductor device structure and method for forming the same
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United States of America Patent
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Jan 9, 2018
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app pub date -
Aug 25, 2016
filing date -
Aug 25, 2016
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Abstract
A method for forming a semiconductor device structure is provided. The method includes forming a spacer layer and a dielectric layer over a substrate. The spacer layer has an opening exposing the substrate, and the dielectric layer surrounds the spacer layer. The method includes forming a metal silicon nitride layer over a sidewall and a bottom surface of the opening. The method includes forming a first work function metal layer over the metal silicon nitride layer. The method includes removing a first top portion of the first work function metal layer. The method includes, after the removal of the first top portion, removing a second top portion of the metal silicon nitride layer. The method includes forming a conductive layer in the opening. The method includes removing a third top portion of the conductive layer and a fourth top portion of the metal silicon nitride layer.
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