Device isolation using preferential oxidation of the bulk substrate

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United States of America Patent

PATENT NO 9865688
SERIAL NO

14213511

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Abstract

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A structure and method for forming a substrate, a buffer layer disposed on the substrate, an oxide layer disposed on the buffer layer, and a fin comprising a semiconductor material disposed on the oxide layer.

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Patent Owner(s)

Patent OwnerAddress
INTERNATIONAL BUSINESS MACHINES CORPORATIONNEW ORCHARD ROAD ARMONK NY 10504

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Basu, Anirban Yorktown Heights, US 84 502
Cohen, Guy M Yorktown Heights, US 195 2507
Majumdar, Amlan Yorktown Heights, US 160 3393
Zhu, Yu Yorktown Heights, US 384 3919

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