Three-dimensional semiconductor memory devices including a vertical channel
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United States of America Patent
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Jan 9, 2018
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N/A
app pub date -
Jan 11, 2017
filing date -
Apr 21, 2014
priority date (Note) -
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Abstract
Semiconductor memory devices and methods of forming the semiconductor devices may be provided. The semiconductor memory devices may include a channel portion of an active pillar that may be formed of a semiconductor material having a charge mobility greater than a charge mobility of silicon. The semiconductor devices may also include a non-channel portion of the active pillar including a semiconductor material having a high silicon content.
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