Nanoscale structure with epitaxial film having a recessed bottom portion
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United States of America Patent
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Jan 9, 2018
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app pub date -
May 8, 2015
filing date -
Dec 20, 2012
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Abstract
An embodiment of the invention includes an epitaxial layer that directly contacts, for example, a nanowire, fin, or pillar in a manner that allows the layer to relax with two or three degrees of freedom. The epitaxial layer may be included in a channel region of a transistor. The nanowire, fin, or pillar may be removed to provide greater access to the epitaxial layer. Doing so may allow for a “all-around gate” structure where the gate surrounds the top, bottom, and sidewalls of the epitaxial layer. Other embodiments are described herein.
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