Electronic device having a transistor with increased contact area and method for fabricating the same
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United States of America Patent
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Jan 9, 2018
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N/A
app pub date -
Jan 2, 2015
filing date -
Sep 11, 2014
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Abstract
An electronic device includes a semiconductor memory unit that includes: a gate including at least a portion buried in a substrate; a junction portion formed in the substrate on both sides of the gate; and a memory element coupled with the junction portion on one side of the gate, wherein the junction portion includes: a recess having a bottom surface protruded in a pyramid shape; an impurity region formed in the substrate and under the recess; and a contact pad formed in the recess.
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