Low temperature fabrication of lateral thin film varistor
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United States of America Patent
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Jan 9, 2018
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Dec 21, 2016
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Feb 26, 2015
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Abstract
A structure and method for fabricating a laterally configured thin film varistor surge protection device using low temperature sputtering techniques which do not damage IC device components contiguous to the varistor being fabricated. The lateral thin film varistor may include of a continuous layer of alternating regions of a first metal oxide layer and a second metal oxide layer formed between two laterally spaced electrodes using a low temperature sputtering process followed by a low temperature annealing process.
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