Memory cell structure with resistance-change material and method for forming the same
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United States of America Patent
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Jan 9, 2018
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Dec 15, 2015
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Dec 15, 2015
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Abstract
Semiconductor structures and methods for forming the same are provided. The semiconductor structure includes a substrate and a memory cell structure formed over the substrate. In addition, the memory cell structure includes a first electrode layer formed over the substrate and a resistance-change material layer formed over the first electrode layer. The memory cell structure further includes a second electrode layer formed over the resistance-change material layer. In addition, the resistance-change material layer includes a semimetal or a semimetal alloy.
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