Photoelectric conversion device and manufacturing method of the photoelectric conversion device

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United States of America Patent

PATENT NO 9865637
SERIAL NO

14925921

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Abstract

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A manufacturing method includes a first process for forming a first gate electrode for a first MOS transistor and a second gate electrode for a second MOS transistor on a substrate including a semiconductor region defined by an insulator region for element isolation, a second process for masking a portion located above the semiconductor region of the first gate electrode to introduce an impurity to a source-drain region of the first MOS transistor, and a third process for forming a first conductor member being in contact with the portion of the first gate electrode through a first hole disposed on an insulator member covering the substrate and a second conductor member being in contact with the second gate electrode through a second hole disposed on the insulator member.

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Patent Owner(s)

Patent OwnerAddress
CANON KABUSHIKI KAISHA30-2 SHIMOMARUKO 3-CHOME OHTA-KU TOKYO 146-8501

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Fujita, Masato Kitakyushu, JP 123 892
Itahashi, Masatsugu Yokohama, JP 49 621
Kakinuma, Nobuaki Tokyo, JP 15 28
Onuki, Yusuke Fujisawa, JP 107 813
Shimotsusa, Mineo Machida, JP 105 939

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