Semiconductor device
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United States of America Patent
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Jan 9, 2018
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N/A
app pub date -
Jan 10, 2017
filing date -
May 12, 2016
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Abstract
A semiconductor device includes a first interlayer insulating layer and a second interlayer insulating layer, and a horizontal conductive pattern interposed between the first interlayer insulating layer and the second interlayer insulating layer. Vertical structures extend through the first interlayer insulating layer, the second interlayer insulating layer, and the horizontal conductive pattern. Each of the first interlayer insulating layer and the second interlayer insulating layer has regions of different impurity concentrations.
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