Semiconductor memory device and method for manufacturing same

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United States of America Patent

PATENT NO 9865616
SERIAL NO

15210446

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Abstract

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A semiconductor memory device according to one embodiment includes a stacked body, a semiconductor pillar and a plurality of charge storage films. The stacked body includes a plurality of electrode films and air gaps. The plurality of electrode films are disposed to be separated from each other along a first direction. Each of the air gaps is made between the electrode films. The semiconductor pillar extends in the first direction and pierces the stacked body. The plurality of charge storage films are provided between the semiconductor pillar and the plurality of electrode films. The plurality of charge storage films are partitioned every electrode film.

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Patent Owner(s)

Patent OwnerAddress
KIOXIA CORPORATIONTOKYO 108-0023

International Classification(s)

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  • 2016 Application Filing Year
  • H01L Class
  • 27971 Applications Filed
  • 23507 Patents Issued To-Date
  • 84.05 % Issued To-Date
Click to zoom InYear of Issuance% of Matters IssuedCumulative IssuancesYearly Issuances20162017201820192020202120222023202420250255075100

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Katsumata, Ryota Yokkaichi, JP 210 11711
Meguro, Hisataka Yokkaichi, JP 27 280
Shimizu, Takashi Nagoya, JP 409 3170
Takahashi, Shinya Yokkaichi, JP 157 1663

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Patent Citation Ranking

  • 4 Citation Count
  • H01L Class
  • 23.71 % this patent is cited more than
  • 7 Age
Citation count rangeNumber of patents cited in rangeNumber of patents cited in various citation count ranges3689997611243481558461392216162801 - 1011 - 2021 - 3031 - 4041 - 5051 - 6061 - 7071 - 8081 - 9091 - 100100 +05001000150020002500300035004000450050005500600065007000750080008500900095001000010500

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