Semiconductor device
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United States of America Patent
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Jan 9, 2018
Issued Date -
N/A
app pub date -
Aug 18, 2015
filing date -
Mar 9, 2015
priority date (Note) -
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Abstract
According to one embodiment, a semiconductor device includes a stacked body and a columnar portion. The stacked body includes a plurality of electrode layers stacked with an insulator between the electrode layers. The columnar portion includes a semiconductor body extending in the stacked body in a stacking direction of the stacked body, and a charge storage film provided between the semiconductor body and the electrode layers. The columnar portion includes a first portion with a first diameter, and a second portion with a second diameter smaller than the first diameter. The first portion has a higher concentration of an impurity than a concentration of the impurity of the second portion. The impurity contains at least one of boron, arsenic, and phosphorus.
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