Multi-tiered semiconductor devices and associated methods
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United States of America Patent
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Jan 9, 2018
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Sep 28, 2015
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Jun 21, 2011
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Abstract
Methods of fabricating multi-tiered semiconductor devices are described, along with apparatus and systems that include them. In one such method, a first dielectric is formed, and a second dielectric is formed in contact with the first dielectric. A channel is formed through the first dielectric and the second dielectric with a first etch chemistry, a void is formed in the first dielectric with a second etch chemistry, and a device is formed at least partially in the void in the first dielectric. Additional embodiments are also described.
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