Semiconductor device and semiconductor memory device
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United States of America Patent
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Jan 9, 2018
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N/A
app pub date -
Mar 7, 2016
filing date -
Mar 19, 2015
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Abstract
According to one embodiment, a semiconductor device includes a first region having a first conductivity type in a semiconductor region; a second region having a second conductivity type in the semiconductor region; a gate electrode above a first part of the semiconductor region between the first region and the second region; a gate insulating layer between the first part and the gate electrode; a third region having the first conductivity type below the second region; and a fourth region across the second region and the third region and including a first impurity.
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