Transistor structure having N-type and P-type elongated regions intersecting under common gate
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Jan 9, 2018
Issued Date -
N/A
app pub date -
Mar 19, 2015
filing date -
Mar 19, 2015
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
A semiconductor structure includes a semiconductor substrate, at least one first elongated region of n-type or p-type, and at least one other second elongated region of the other of n-type or p-type, the first and second elongated regions crossing such that the first elongated region and the second elongated region intersect at a common area, and a shared gate structure over each common area.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully