Semiconductor devices having bit lines and method of fabricating the same
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United States of America Patent
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Jan 9, 2018
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N/A
app pub date -
Feb 19, 2016
filing date -
Mar 20, 2015
priority date (Note) -
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Abstract
Semiconductor devices and methods of forming the semiconductor devices are provided. The semiconductor devices may include a bit line provided to cross an active region of a substrate, isolation patterns provided on the substrate to face each other in a direction parallel to the bit line, a storage node contact provided between the isolation patterns to be in contact with a source/drain region provided in an upper portion of the active region, and a spacer provided between the bit line and the storage node contact. Here, the isolation patterns may include a material having an etch selectivity with respect to the spacer.
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