Semiconductor integrated circuit
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United States of America Patent
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Jan 9, 2018
Issued Date -
N/A
app pub date -
Dec 16, 2015
filing date -
Dec 16, 2015
priority date (Note) -
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Abstract
The present disclosure relates to a semiconductor integrated circuit. The semiconductor integrated circuit includes a substrate, a first transistor and a first patterned conductive layer. The first transistor has a source region, a drain region in the substrate and a gate region on the substrate. The first patterned conductive layer is electrically connected to the drain region of the first transistor. The first patterned conductive layer includes a first section, a second section and a fusible device.
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