Semiconductor integrated circuit

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United States of America Patent

PATENT NO 9865601
SERIAL NO

14971461

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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The present disclosure relates to a semiconductor integrated circuit. The semiconductor integrated circuit includes a substrate, a first transistor and a first patterned conductive layer. The first transistor has a source region, a drain region in the substrate and a gate region on the substrate. The first patterned conductive layer is electrically connected to the drain region of the first transistor. The first patterned conductive layer includes a first section, a second section and a fusible device.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD8 LI-HSIN RD 6 HSINCHU SCIENCE PARK HSINCHU 300-78

International Classification(s)

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  • 2015 Application Filing Year
  • H01L Class
  • 25498 Applications Filed
  • 22451 Patents Issued To-Date
  • 88.06 % Issued To-Date
Click to zoom InYear of Issuance% of Matters IssuedCumulative IssuancesYearly Issuances20152016201720182019202020212022202320240255075100

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chih, Yu-Der Hsinchu, TW 195 382
Lee, Chia-Fu Hsinchu, TW 103 270
Lin, Kai-Chun Hsinchu, TW 31 334

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Patent Citation Ranking

  • 0 Citation Count
  • H01L Class
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  • 7 Age
Citation count rangeNumber of patents cited in rangeNumber of patents cited in various citation count ranges3689997611243481558461392216162801 - 1011 - 2021 - 3031 - 4041 - 5051 - 6061 - 7071 - 8081 - 9091 - 100100 +05001000150020002500300035004000450050005500600065007000750080008500900095001000010500

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