Semiconductor device having fin and dual liner
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United States of America Patent
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Jan 9, 2018
Issued Date -
N/A
app pub date -
Sep 8, 2015
filing date -
Sep 8, 2015
priority date (Note) -
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Abstract
A semiconductor device is provided as follows. A first fin is formed on a first region of a substrate, extending in a first direction. A second fin is formed on a second region of the substrate, extending in a second direction. A first dual liner is formed on a lateral surface of the first fin. The first dual liner includes a first liner and a second liner. The first liner is interposed between the second liner and the lateral surface of the first fin. A second dual liner is formed on a lateral surface of the second fin. The second dual liner includes a third liner and a fourth liner. The third liner is interposed between the fourth liner and the lateral surface of the second fin. An epitaxial layer surrounds a top portion of the second fin. The first liner and the third liner have different thicknesses.
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