Silicon carbide semiconductor device
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United States of America Patent
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Jan 9, 2018
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N/A
app pub date -
Nov 2, 2016
filing date -
May 23, 2014
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Abstract
A silicon carbide semiconductor device includes a transistor region, a diode region, a gate line region, and a gate pad region. The gate pad region and the gate line region are each disposed to be sandwiched between the diode region and the diode region, and a gate electrode on the gate pad region and the gate line region is formed on an insulating film formed on an epitaxial layer. Thus, breakdown of the insulating film in the gate region can be prevented without causing deterioration in quality of the gate insulating film, upon switching and avalanche breakdown.
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