Integrated thinfilm resistor and MIM capacitor with a low serial resistance
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United States of America Patent
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Jan 9, 2018
Grant Date -
May 19, 2016
app pub date -
Jan 22, 2016
filing date -
May 5, 2014
priority date (Note) -
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Abstract
An electronic device comprising a semiconductor structure having a back end capacitor and a back end thin film resistor and a method of manufacturing the same. The semiconductor structure includes a first dielectric layer, a bottom plate of the capacitor and a thin film resistor body. The bottom plate and the resistor body are laterally spaced apart portions of the same thin film layer. The bottom plate further includes a conductive layer overlying the thin film layer. A second dielectric layer is disposed on the conductive layer of the bottom plate of the capacitor. A top plate of the capacitor is disposed on the second dielectric layer.
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