Semiconductor structure and manufacturing method thereof
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United States of America Patent
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Jan 9, 2018
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app pub date -
Jun 15, 2016
filing date -
Jun 15, 2016
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Abstract
A semiconductor structure includes a substrate, a redistribution layer (RDL) including a dielectric layer disposed over the substrate and a plurality of conductive members surrounded by the dielectric layer, a first conductive pillar disposed over and electrically connected with one of the plurality of conductive members, a second conductive pillar disposed over and electrically connected with one of the plurality of conductive member, a first die disposed over the RDL and electrically connected with the first conductive pillar, and a second die disposed over the RDL and electrically connected with the second conductive pillar, wherein a height of the second conductive pillar is substantially greater than a height of the first conductive pillar, and a thickness of the first die is substantially greater than a thickness of the second die.
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