Semiconductor device, manufacturing method thereof, and electronic apparatus
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United States of America Patent
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Jan 9, 2018
Issued Date -
N/A
app pub date -
Oct 2, 2014
filing date -
Oct 9, 2013
priority date (Note) -
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Abstract
A semiconductor device includes a wiring layer that includes at least one low-dielectric rate interlayer insulating film layer; a guard ring that is formed by placing in series a wire and a via so as to be in contact with a through electrode, in a portion in which the through electrode passing through the wiring layer is formed; and the through electrode that is formed by being buried inside the guard ring.
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