Contacts to semiconductor substrate and methods of forming same
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United States of America Patent
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Jan 9, 2018
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N/A
app pub date -
Jun 3, 2015
filing date -
Jun 3, 2015
priority date (Note) -
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Abstract
An aspect of the invention includes a method for forming a contact in a dielectric layer over a semiconductor substrate. The method may comprise: forming a contact opening in a dielectric layer over the semiconductor substrate to expose an upper portion of the semiconductor substrate; depositing a first liner layer to conformally coat the contact opening; causing a portion of the first liner layer to diffuse into the upper portion of the semiconductor substrate to form a first intermix region at the upper portion of the semiconductor substrate; depositing a refractory metal layer over the first intermix region; and depositing a metal in the contact opening thereby forming the contact.
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