Formation of strained fins in a finFET device
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United States of America Patent
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Jan 9, 2018
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app pub date -
Sep 13, 2016
filing date -
Feb 6, 2015
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Abstract
In an aspect of the present invention, a field-effect transistor (FET) structure is formed. The FET structure comprises a plurality of fins formed on a semiconductor substrate, wherein the plurality of fins includes a set of fins that include a base portion that is comprised of relaxed silicon-germanium (SiGe) and an upper portion that is comprised of semiconductor material. In one aspect, a first set of one or more fins that include an upper portion comprised of a first semiconductor material. In another aspect, a second set of one or more fins that include an upper portion comprised of a second semiconductor material.
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