Stack type semiconductor memory device
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United States of America Patent
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Jan 9, 2018
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app pub date -
Jan 26, 2016
filing date -
Dec 15, 2011
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Abstract
A stack type memory device and a method of manufacturing the same are provided. The stack type memory device includes a semiconductor substrate, a plurality of active layers stacked on the semiconductor substrate, and a gate structure overlapping the plurality of active layers. The gate structure includes a side gate region overlapping sides of the plurality of active layers and a top gate region overlapping a top of an uppermost active layer.
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