Method and apparatus for gap fill using deposition and etch processes
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Jan 9, 2018
Issued Date -
N/A
app pub date -
Jun 17, 2016
filing date -
Jun 23, 2015
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
A method for depositing a silicon-containing film is performed by causing a silicon-containing gas to adsorb on a first surface of a depression formed in a second surface of a substrate by supplying the silicon-containing gas to the substrate. A silicon component contained in the silicon-containing gas adsorbed on the first surface of the depression is partially etched by supplying an etching gas to the substrate. A silicon-containing film is deposited in the depression by supplying a reaction gas reactable with the silicon component to the substrate so as to produce a reaction product by causing the reaction gas to react with the silicon component left in the depression without being etched.
First Claim
Other Claims data not available
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
- 1 Citation Count
- C23C Class
- 32.86 % this patent is cited more than
- 7 Age
Maintenance Fees
| Fee | Large entity fee | small entity fee | micro entity fee | due date |
|---|---|---|---|---|
| 7.5 Year Payment | $3600.00 | $1800.00 | $900.00 | Jul 9, 2025 |
| 11.5 Year Payment | $7400.00 | $3700.00 | $1850.00 | Jul 9, 2029 |
