Timing/power risk optimized selective voltage binning using non-linear voltage slope

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United States of America Patent

PATENT NO 9865486
SERIAL NO

15083692

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Abstract

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Systems and methods for optimizing timing/power risk SVB using a customer-supplied, non-linear voltage slope. Chips are manufactured according to an integrated circuit design. The minimum operating voltage and hardware variations for each device in the design is determined and a process distribution for the chips is divided into process windows. Vmax and Vmin to support system frequency are determined for each process window. Vmin vs. process-bin mean and sigma sensitivity is calculated using information about specific devices. The voltage for each process window that generates Vmin for specific devices is identified. Power at the slow end and fast end of each process window is evaluated using the voltage to support system frequency. Pmax is determined. Vmax for each process window that generates Pmax is determined. A voltage is identified between Vmin and Vmax that maximizes the timing margin for system frequency while minimizing risk for Pmax. The chips are sorted into different process windows, based on the voltage identified.

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Patent Owner(s)

Patent OwnerAddress
MARVELL ASIA PTE LTDSINGAPORE CITY SINGAPORE CITY SINGAPORE

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Arsovski, Igor Williston, US 120 1401
Bickford, Jeanne P Essex Junction, US 73 413
Kuemerle, Mark W Essex Junction, US 23 175
Lichtensteiger, Susan K Essex Junction, US 34 383
Raymond, Jeanne H Richmond, US 3 21

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