Etching method using plasma, and method of fabricating semiconductor device including the etching method

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United States of America Patent

PATENT NO 9865474
SERIAL NO

15347331

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Abstract

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An etching method using plasma includes generating plasma by supplying process gases to at least one remote plasma source (RPS) and applying power to the at least one RPS, and etching an etching object by supplying water (H2O) and the plasma to a process chamber.

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Patent Owner(s)

Patent OwnerAddress
SAMSUNG ELECTRONICS CO LTDGYEONGGI DO SOUTH KOREA GYEONGGI-DO

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
An, Sang-jin Suwon-si, KR 4 6
Chen, Xinglong Seongnam-si, KR 65 9781
Cho, Sung-keun Seoul, KR 3 7
Choi, In-ho Suwon-si, KR 56 726
Kim, Gon-jun Suwon-si, KR 7 21
Lee, Sangheon Seongnam-si, KR 89 746
Volynets, Vladimir Suwon-si, KR 12 112
Yang, Hee-jeon Suwon-si, KR 5 13

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