Methods of forming semiconductor devices using semi-bidirectional patterning and islands
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United States of America Patent
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Jan 9, 2018
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app pub date -
Nov 15, 2016
filing date -
Nov 15, 2016
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Abstract
Devices and methods of fabricating integrated circuit devices using semi-bidirectional patterning are provided. One method includes, for instance: obtaining an intermediate semiconductor device having a dielectric layer, a first hardmask layer, a second hardmask layer, a third hardmask layer, and a lithography stack; patterning a first set of lines; patterning a second set of lines between the first set of lines; etching to define a combination of the first and second set of lines; depositing a second lithography stack; patterning a set of islands; etching to define the set of islands, leaving an OPL; depositing a spacer over the OPL; etching the spacer, leaving a vertical set of spacers; and etching the second hardmask layer using the third hardmask layer and the set of vertical spacers as masks.
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