Etching method and etching apparatus
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United States of America Patent
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Jan 9, 2018
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Apr 20, 2016
filing date -
Apr 30, 2015
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Abstract
A method for etching a silicon film formed on a substrate includes supplying HBr gas, NF3 gas, and O2 gas into a chamber and performing a plurality of etching processes on the silicon film with a plasma generated by the supplied HBr gas, NF3 gas, and O2 gas, gradually reducing a flow rate of the HBr gas during the plurality of etching processes, and adjusting a flow rate of the O2 gas according to the reduction of the HBr gas.
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