Methods of forming silicon nitride by atomic layer deposition and methods of forming semiconductor structures
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Jan 9, 2018
Issued Date -
N/A
app pub date -
Aug 12, 2016
filing date -
Aug 12, 2016
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
Methods of forming silicon nitride. Silicon nitride is formed on a substrate by atomic layer deposition at a temperature of less than or equal to about 275° C. The as-formed silicon nitride is exposed to a plasma. The silicon nitride may be formed as a portion of silicon nitride and at least one other portion of silicon nitride. The portion of silicon nitride and the at least one other portion of silicon nitride may be exposed to a plasma treatment. Methods of forming a semiconductor structure are also disclosed, as are semiconductor structures and silicon precursors.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully