Nitride film formed by plasma-enhanced and thermal atomic layer deposition process
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United States of America Patent
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Jan 9, 2018
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Sep 7, 2016
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Sep 7, 2016
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Abstract
Provided are methods and apparatuses for depositing a nitride film using one or more plasma-enhanced atomic layer deposition cycles and one or more thermal atomic layer deposition cycles in a single reactor. The number of thermal atomic layer deposition cycles can be equal to or greater than the number of plasma-enhanced atomic layer deposition cycles. Incorporation of thermal atomic layer deposition cycles with plasma-enhanced atomic layer deposition cycles can allow for greater fine-tuning of properties of the nitride film. In some implementations, the nitride film is a silicon nitride film. The silicon nitride film can be fine-tuned to allow for a more silicon-rich film with a greater refractive index. In some implementations, the plasma-enhanced atomic layer deposition cycles and the thermal atomic layer deposition cycles can be maintained at the same wafer temperature.
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