Plasma generator, annealing device, deposition crystallization apparatus and annealing process
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United States of America Patent
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Jan 9, 2018
Issued Date -
N/A
app pub date -
Nov 13, 2015
filing date -
May 18, 2015
priority date (Note) -
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status (Latency Note)
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Abstract
A plasma generator, a plasma annealing device, a deposition crystallization apparatus and a plasma annealing process are disclosed. The plasma generator includes: a gas chamber; a gas intake member configured to introduce a gas into the gas chamber; a cathode and an anode that are configured to apply an electric field to the gas introduced into the gas chamber to ionize the gas into plasma; a cooling water circulation member configured to control a temperature of the plasma generator; and a plasma beam outlet disposed on a top face of the gas chamber. The plasma annealing device including the plasma generator can generate a plasma beam, which can be used in annealing to amorphous silicon and crystallize the amorphous silicon to polycrystalline silicon.
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| Fee | Large entity fee | small entity fee | micro entity fee | due date |
|---|---|---|---|---|
| 7.5 Year Payment | $3600.00 | $1800.00 | $900.00 | Jul 9, 2025 |
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