Apparatus and method for tuning a plasma profile using a tuning electrode in a processing chamber
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United States of America Patent
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Jan 9, 2018
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Feb 12, 2014
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Mar 15, 2013
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Abstract
Embodiments of the present invention relate to apparatus for enhancing deposition rate and improving a plasma profile during plasma processing of a substrate. According to embodiments, the apparatus includes a tuning electrode disposed in a substrate support pedestal and electrically coupled to a variable capacitor. The capacitance is controlled to control the RF and resulting plasma coupling to the tuning electrode. The plasma profile and the resulting deposition rate and deposited film thickness across the substrate are correspondingly controlled by adjusting the capacitance and impedance at the tuning electrode.
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