Electronic device including a semiconductor memory having memory arrays with variable resistance storage elements and a bias voltage generator arranged between the arrays
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United States of America Patent
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Jan 9, 2018
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N/A
app pub date -
Nov 28, 2016
filing date -
May 19, 2014
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Abstract
An electronic device includes a semiconductor memory device. The semiconductor memory device includes: a word line driving unit for driving a plurality of word lines; a first circuit area including a first cell array arranged at one side of the word line driving unit; a second circuit area including a second cell array arranged at the other side of the word line driving unit; a bias voltage generation unit arranged between the first cell array and the second cell array; a first read control unit; and a second read control unit. The first and second cell arrays include storage cells having variable resistance elements, and the bias voltage generation unit generates a bias voltage based on currents flowing through a first reference resistance element included in the first cell array and a second reference resistance element included in the second cell array.
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