Semiconductor memory with data line capacitive coupling

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United States of America Patent

PATENT NO 9865336
SERIAL NO

15435149

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Abstract

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A semiconductor memory includes a first data line, a second data line, a first coupling line, a second coupling line, a first plurality of transistors, and a second plurality of transistors. The first coupling line is configured to be capacitively coupled with the first data line. The second coupling line is configured to be capacitively coupled with the second data line. The first plurality of transistors are configured to transmit a first voltage to the first coupling line and the second coupling line in response to a first control signal. The second plurality of transistors are configured to transmit a second voltage to the first coupling line, the second coupling line, or a combination thereof in response to a second control signal and a third control signal.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD8 LI-HSIN RD 6 HSINCHU SCIENCE PARK HSINCHU 300-78

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Liaw, Jhon-Jhy Hsinchu County, TW 324 5442

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