Spin transfer MRAM device with reduced coefficient of MTJ resistance variation
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United States of America Patent
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Jan 9, 2018
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app pub date -
Jul 22, 2016
filing date -
Jul 27, 2007
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Abstract
We describe the manufacturing process for and structure of a CPP MTJ MRAM unit cell that utilizes transfer of spin angular momentum as a mechanism for changing the magnetic moment direction of a free layer. The cell is formed of a vertically or horizontally series connected sequence of N sub-cells, each sub-cell being an identical MTJ element. A statistical population of such multiple sub-cell unit cells has a variation of resistance that is less by a factor of N−1/2 than that of a population of single sub-cells. As a result, such unit cells have an improved read margin while not requiring an increase in the critical switching current.
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