Background threshold voltage shifting using base and delta threshold voltage shift values in non-volatile memory
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United States of America Patent
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Jan 9, 2018
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app pub date -
Jan 12, 2017
filing date -
Sep 29, 2014
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Abstract
In one embodiment, a computer-implemented method includes determining, by a processor, after the writing of data to a non-volatile memory block, one or more delta threshold voltage shift (TVSΔ) values configured to track temporary changes with respect to changes in the underlying threshold voltage distributions due to retention and/or read disturb errors. One or more overall threshold voltage shift values is calculated for the data written to the non-volatile memory block, the one or more overall threshold voltage shift values being a function of the one or more TVSΔ values to be used when writing data to the non-volatile memory block. The one or more overall threshold voltage shift values are stored.
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