Pellicle and method for manufacturing the same

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United States of America Patent

PATENT NO 9864270
APP PUB NO 20170205705A1
SERIAL NO

14996966

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Abstract

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A method for manufacturing a pellicle includes: providing a supporting substrate; forming an oxide layer over the supporting substrate; forming a metal layer over the oxide layer; forming a graphene layer over the metal layer; and removing at least a portion of the supporting substrate and the oxide layer. An associated method includes: providing a supporting substrate; forming a first silicon carbide (SiC) layer or a diamond layer over the supporting substrate; forming a graphene layer over the SiC layer or the diamond layer; and removing at least a portion of the supporting substrate and the first silicon carbide (SiC) layer or the diamond layer; wherein the pellicle is at least partially transparent to extreme ultraviolet (EUV) radiation. An associated pellicle is also disclosed.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD8 LI-HSIN RD 6 HSINCHU SCIENCE PARK HSINCHU 300-78

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chern, Chyi Shyuan Taipei, TW 52 706
Lin, Chih-Cheng Kaohsiung, TW 79 292
Lin, Yun-Yue Hsinshu, TW 77 363
Ma, Jeng-Shin Taipei, TW 3 10
Wu, Tsiao-Chen Hsinchu County, TW 26 431
Yang, Chi-Ming Hsinchu, TW 184 1930

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