Non-planar monolithic hybrid optoelectronic structures and methods
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United States of America Patent
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Jan 9, 2018
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Aug 9, 2016
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Aug 9, 2016
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Abstract
Disclosed are non-planar monolithic hybrid optoelectronic structures. These structures are referred to as non-planar because they contain one or more semiconductor fins. These structures are referred to as monolithic because they contain, within each semiconductor fin, an optical waveguide core positioned laterally between a light sensor and a photodetector. Specifically, each semiconductor fin has end portions and a center portion positioned laterally between the end portions. The center portion is an optical waveguide core and the end portions have trenches that contain the light source and photodetector, respectively. These structures are referred to as hybrid because the optical waveguide core is made of one semiconductor material and the light sensor and photodetector are each made of at least one additional semiconductor material that is different from the semiconductor material of the center portion. Also disclosed herein are methods of forming monolithic non-planar hybrid optoelectronic structures.
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